engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices MOS Capacitor Work Function Difference
Consider a MOS structure with n-type silicon. A metal-semiconductor work function difference of ϕms = - 0.35 V is required. For an aluminium-silicon dioxide junction, ϕm’ = 3.20 V and for a silicon-silicon dioxide junction χ = 3.25 V and Eg = 1.12 eV. If the gate is aluminum, then the silicon doping required to meet the specification is _______ × 1014 cm-3 (up to two decimal places).
(Take VT = 26 mV)Enter numerical value using the virtual keypad. Round off where necessary.