engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Optical Devices Light Emitting Diode (LED)
An n type silicon sample with donor doping concentration of ND = 1017/cm3 is steadily illuminated such that there is an additional generation rate (g') of 1020 cm-3s-1. If τn0 = τp0 = 10-6 s, the portion of qnari-fermi level for holes with respect to intrinsic level is ______ eV. (ni = 1010/cm3 and τ = 300 K)
Enter numerical value using the virtual keypad. Round off where necessary.