engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices PN Junction PN Diode Capacitances
An abrupt silicon junction at T = 300 K is uniformly doped with Na = 1018 cm-3 and Nd = 1015 cm-3. The PN junction area is 6 × 10-4 cm2. An inductance of 2.2 millihenries is placed in parallel with the PN junction. The resonant frequency (in MHz) of the circuit for a reverse-bias voltage of VR = 1 V will be_________. [Take ϵr for silicon as 11.7]
Enter numerical value using the virtual keypad. Round off where necessary.