engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carriers in Semiconductors Position of Fermi Energy Level
Gallium arsenide at T = 300 K with an intrinsic concentration of 1.8 × 106 cm-3 contains acceptor impurity atoms at a density of 1016cm-3. Additional impurity atoms are to be added so that the Fermi level is 0.45 eV below the intrinsic level.
(The intrinsic carrier concentration ni = 1.8 × 106 cm-3 and kT = 26 mV)
Which of the following statements is/are true:
1
The type of additional impurity atoms that must be added is donor.
2
The type of additional impurity atoms that must be added is acceptor.
3
The concentration of additional impurity atoms that must be added is 9.9368 × 1015 cm-3
4
The concentration of additional impurity atoms that must be added is 6.32 × 1013 cm-3