engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices MOS Capacitor Flat Band Voltage
Consider a MOS capacitor with a p-type silicon substrate doped with Na = 1016 cm-3, a silicon dioxide insulator with a thickness of tox = 20 nm and an n+ polysilicon gate. Assume Q’ss = 5 × 1010 electronic charges per cm2 are the trapped oxide charge and ϕms = - 1.1 V, the flat-band voltage for the MOS capacitor is approximately:
(Take ϵox ≈ 4 × 10-13 F/cm )
1
-1.14 V
2
-2.9 V
3
1.15 V
4
2.9 V