engineering recuitment GATE ECE 2023-24 Test Series Analog Electronics Field Effect Transistors Frequency Analysis of FET
The unity gain bandwidth of an n-channel MOSFET with parameters \(K_n=\frac{W\mu _nC_{0x}}{2L}\) (conduction perameter of an n-channel MOSFET) = 0.25 mA/v2, VTN = 1 V and channel inversion capacitances Cgd = 0.03 pF Cgs = 0.3 pF. Assume the transistor is biased in saturation at VGSQ = 3 V. The bandwidth in MHz will be ______. (Ignore Miller Effect)
Enter numerical value using the virtual keypad. Round off where necessary.