engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices MOS Capacitor Two Terminal MOS Structure
For a MOSFET with gate plate area 0.5 × 10-3 m2 and oxide layer thickness 80 nm, the value of MOS capacitance and its break down voltage are, (assume relative di-electric constant of SiO2, ϵr = 4 and ϵ0 = 8.854 × 10-14 F/cm and dielectric strength of SiO2 film is 5 × 106 V/cm)
1
0.22 μF and 80V
2
0.22 μF and 40V
3
1.22 μF and 40V
4
1.08 μF and 80V