engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carriers in Semiconductors Compensated Semiconductors
Which of the following statements is/are correct?
1
An n type silicon sample has higher conductivity compared to a p-type having the same dopant concentration.
2
In a semiconductor the conductivity is independent of voltage (applied field) always.
3
Under large doping concentration drift current is insignificant compared to the diffusion current.
4
The change of momentum associated with the recombination in direct bandgap is negligible.