engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Bipolar Junction Transistor Minority Carrier Distribution
At T = 300 K, an n-type silicon sample contains a donor concentration Nd = 1016 cm-3 and intrinsic concentration ni = 1.5 × 1010 cm-3. The minority carrier hole lifetime is found to be τp0 = 20 μ sec.
What will be the lifetime of the majority carrier electrons?
1
2.25 × 109 s
2
5 × 1020 s
3
1.125 × 109 s
4
8.89 × 106 s