In a compensated silicon semiconductor at temperature T = 300 K, the acceptor and donor doping carrier concentration is given by N_a= N_d= 10¹⁵ cm-3. For the silicon the intrinsic carrier concentration is given as 1.5 x 10¹⁰ cm^-3.The hole mobility (µ_p) is 480 cm ²/V-s and electron mobility (µ_n) is 1350 cm 2/V-s. The conductivity of the material at temperature T= 300 K is ______  × 10^-6 (ohm-cm)^-1.