The gate oxide thickness in the MOS capacitor is:
Given, ϵSiO2 = 3.5 x 10-13 F/cm and Area = 1 × 10-4 cm2.
1
50 nm
2
143 nm
3
350 nm
4
100 nm
The gate oxide thickness in the MOS capacitor is:
Given, ϵSiO2 = 3.5 x 10-13 F/cm and Area = 1 × 10-4 cm2.