engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices MOS Capacitor Charge Distribution in the Mos Substrate
A MOS capacitor fabricated with metal with work function 4 eV and p-type Si with electron affinity 3.8 eV. The conduction band of Si is 0.8 eV above the Fermi energy level. If ϵr (SiO2) = 3.9, ϵ0 = 8.85 × 10-14 F/cm and oxide thickness is tox = 90 nm, the measured flat band voltage of MOS cap is -1V, then the magnitude of the charge at oxide semiconductor interface is ____ nC/cm2.
Enter numerical value using the virtual keypad. Round off where necessary.