Given:
pn0: Hole concentration in an n-type extrinsic semiconductor
ni: Intrinsic carrier concentration
Nd: Donor atom concentration
nn0: Electron concentration in an n-type extrinsic semiconductor
EFn: Fermi energy level in an n-type semiconductor
Ec: The lower end of the conduction band
Ev: The higher end of the valence band
Which of the following equations will not be valid for an n-type semiconductor under very high temperatures?
1
\({p_{n0}} = \frac{{n_i^2}}{{{N_d}}}\)
2
\({p_{n0}} = \frac{{n_i^2}}{{{n_{n0}}}}\)
3
\({E_{Fn}} = \frac{{{E_c} + {E_v}}}{2}\)
4
nn0 = Nd + pn0