engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Optical Devices Electron-Hole Pair Generation
A silicon sample doped uniformly with impurities donor 1.7 × 1014 cm-3 and acceptor 1 × 1015 cm-3. The sample is illuminated by light causing increase in holes, electrons by Δp and Δn. If ni is intrinsic concentration then
1
Δn = Δp
2
Δn > Δp
3
Δn < Δp
4
n2i = Δn × Δp