engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carrier Transport Carrier Drift
For a phosphorus doped silicon, the mobility of electrons at T = 300 K is 1204 cm2 / V-s. The ratio resistivity of the sample at T = 500 K to T = 300 K is ______ . (Assume negligible change in the concentration).
1
1.67
2
2.15
3
1
4
5