engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Bipolar Junction Transistor

The parameters in the base region of an npn bipolar transistor are D_n = 20 cm²/s, n_B = 10⁴ cm^-3, x_B = 2 μm and A_BE = 2 × 10^-4 cm². The collector current for V_BE = 0.75 V is ______ (T = 300 K)

1

0.15 A

2

0.12 A

3

1 A

4

2 A

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