engineering recuitment MAHATRANSCO AE Electrical Mock Test Power Electronics and Drives Power Semiconductor Diodes and Transistors Insulated Gate Bipolar Transistor
Which of the following statements about an Insulated Gate Bipolar Transistor (IGBT) is NOT true?
1
The IGBT is developed by combining the characteristics of a BJT and a MOSFET
2
The on-state losses of an IGBT are lesser than a MOSFET
3
The IGBT has high input impedance than BJT
4
The IGBT contains a parasitic thyristor
5
The IGBT is slower than a BJT