engineering recuitment BEL Probationary Engineers Mock Test 2025 Electronic Devices Device Technology
The sequence of first to last step involved in a typical silicon gate n - MOS transistor is
(A) Gate oxidation
(B) Contact cuts
(C) Patterning SiO2 layer
(D) Implant or diffusion
(E) Patterning of aluminium layer
Choose the correct answer from the options given below:
(1) (C), (D), (A), (B), (E)
(2) (B), (D), (A), (C), (E)
(3) (C), (A), (D), (B), (E)
(4) (B), (A), (D), (E), (C)
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1
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2
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3
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4