engineering recuitment BEL Probationary Engineers Mock Test 2025 Electronic Devices Carriers in Semiconductors Extrinsic Fermi Level
A Si n-type semiconductor is doped with donor impurity of 1016 cm-3 at room temperature if the intrinsic concentration is 1010 cm-3 then the gap between Fermi energy level and intrinsic energy level is
1
0.18 eV
2
0.36 eV
3
0.09 eV
4
0.54 eV