railway RRB JE (CBT I + CBT II) Mock Test 2024 Electronic Devices Carrier Transport Carrier Drift

A sample of Si is doped with 1017 donor atoms/cm3. Considering electron mobility in the doped Si 700 cm2/V-sec, the approximate resistivity of the doped Si is

1
1 Ω-cm 
2
10 Ω-cm 
3
0.1 Ω-cm 
4
100 Ω-cm 
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