Electronic Devices Junction Field Effect Transistor Pinch-Off and Saturation

Determine the channel half-width for an n-channel silicon FET having Gate-to-Source voltage, V_GS = V_p/4, where V_p is the Pinch-off voltage and drain current, I_d = 0.

(Consider (a) Donor Concentration N_D = 10¹⁵electrons/cm³. (b) Channel half-width for V_GS = 0 V is 3μm).

1

2.25 μm

2

3 μm

3

1.5 μm

4

0.75 μm

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