Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016 atoms/cm3 at 300 K temperature. Determine the approximate resistivity of the slab.
(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010 /cm3; Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).
1
0.48 Ω - cm
2
0.35 Ω - cm
3
0.16 Ω - cm
4
1.25 Ω - cm