Determine the change in collector current, ΔIc due to change in base-emitter voltage VBE from 25°C to 100°C for a Silicon Transistor in Fixed Bias Configuration having β = 100.
(Consider the following variation in Silicon transistor parameters with temperature – At T= 25°C, VBE = 0.65 V and At T = 100°C. VBE = 0.5 V)
1
60 μA
2
30 μA
3
15 μA
4
120 μA