The transconductance gm of an FET in the saturation region equals
1
\(\frac{{ - 2{I_{DSS}}}}{{{V_P}}}\left[ {1 - \frac{{{V_{GS}}}}{{{V_P}}}} \right]\)
2
\(\frac{{ - 2{I_{DSS}}}}{{{V_P}}}{\left[ {1 - \frac{{{V_{GS}}}}{{{V_P}}}} \right]^2}\)
3
\(\frac{{ - 2{I_{DSS}}}}{{{V_P}}}{\left[ {1 - \frac{{{V_{GS}}}}{{{V_P}}}} \right]^{1/2}}\)
4
\(\frac{I}{{{V_P}}}{\left[ {{I_{DSS}}X{I_{DS}}} \right]^{1/2}}\)