Silicon (at 300 K) has hole concentration (and equal electron concentration) of 1.5 × 1016 m-3. After indium is doped, the new hole concentration is 4.5 × 1022 m-3. The value of electron concentration in the doped silicon is:
1
5.0 × 109 m-3
2
1.5 × 1016 m-3
3
4.5 × 1022 m-3
4
3.0 × 106 m-3