Consider crystalline silicon with the following properties:
- Energy gap: 1.14 eV
- Hole effective mass: mh = 0.3m
- Electron effective mass: me = 0.2m
Determine the donor concentration Nd required for pentavalent arsenic (As) doping to make the extrinsic conductivity 104 times greater than the intrinsic conductivity at room temperature. Assume no acceptor impurities and take the static dielectric constant as ε = 11.8 .
1
\( N_d ≈ 7.2 \cdot 10^{16} \, \text{mm}^{-3}\)
2
\( N_d ≈ 7.2 \cdot 10^{18} \, \text{mm}^{-3}\)
3
\( N_d ≈ 7.2 \cdot 10^{18} \, \text{m}^{-3}\)
4
\( N_d ≈ 7.2 \cdot 10^{18} \, \text{cm}^{-3}\)